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| 0.5 - 10 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170 Features * Low Noise Figure: 0.8 dB Typical at 4 GHz * High Associated Gain: 14.0 dB Typical at 4 GHz * High Output Power: 21.0 dBm Typical P 1 dB at 4 GHz * Hermetic Gold-Ceramic Microstrip Package housed in a hermetic, high reliability package. Its noise figure makes this device appropriate for use in low noise amplifiers operating in the 0.5-10 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 70 mil Package Description The ATF-25170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor Electrical Specifications, TA = 25C Symbol NFO Parameters and Test Conditions Optimum Noise Figure: VDS = 3 V, IDS = 20 mA f = 4.0 GHz f = 6 0 GHz f = 8.0 GHz f = 4.0 GHz f = 6.0 GHz f = 8.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB dB dB dB dB dB dBm dB mmho mA V 50 50 -3.0 Min. Typ. Max. 0.8 1.0 1.2 14.0 11.5 9.0 21.0 15.0 80 100 -2.0 150 -0.8 1.0 GA Gain @ NFO: VDS =3 V, IDS = 20 mA 13.0 P1 dB G1 dB gm IDSS VP Power Output @ 1 dB Gain Compression: VDS =5 V, IDS =50 mA 1 dB Compressed Gain: VDS =5 V, IDS =50 mA Transconductance: VDS = 3 V, VGS = 0 V Saturated Drain Current: VDS =3 V, VGS = 0 V Pinch-off Voltage: VDS = 3 V, IDS = 1 mA 5-57 5965-8712E ATF-25170 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature Units V V V mA mW C C Absolute Maximum[1] + 7 -4 -8 IDSS 450 175 -65 to +175 Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMOUNTING SURFACE = 25C. 3. Derate at 3.3 mW/C for TMOUNTING SURFACE >40C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information. Thermal Resistance: Liquid Crystal Measurement: jc = 300C/W; TCH = 150C 1 m Spot Size[4] ATF-25170 Noise Parameters: VDS = 3 V, IDS = 20 mA Freq. GHz 1.0 2.0 4.0 6.0 8.0 NFO dB 0.6 0.7 0.8 1.0 1.2 opt Mag .89 .77 .63 .66 .62 Ang 24 50 105 147 -159 RN/50 .78 .53 .33 .06 .11 ATF-25170 Typical Performance, TA = 25C 25 18 15 16 14 GA 20 MSG GA (dB) GA 2.0 12 9 12 10 1.5 GAIN (dB) 15 MAG 1.5 10 |S21|2 NFO (dB) NFO (dB) 1.0 NFO 6 1.0 0.5 0 NFO 5 0.5 0 2.0 0 0.5 1.0 2.0 4.0 6.0 8.0 12.0 4.0 6.0 8.0 10.0 12.0 0 10 20 30 IDS (mA) 40 50 60 FREQUENCY (GHz) FREQUENCY (GHz) Figure 1. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 3 V, IDS = 20 mA. Figure 2. Optimum Noise Figure and Associated Gain vs. Frequency. VDS = 3V, IDS = 20 mA. Figure 3. Optimum Noise Figure and Associated Gain vs. IDS. VDS = 3V, f = 4.0 GHz. 5-58 GA (dB) Typical Scattering Parameters, Common Emitter, Z O = 50 , TA = 25C, VDS = 3 V, IDS = 20 mA Freq. GHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 Mag. .98 .96 .88 .80 .77 .71 .65 .60 .56 .56 .55 .53 .53 S11 Ang. -23 -38 -66 -86 -106 -127 -149 -173 161 136 118 108 95 dB 13.6 13.0 11.5 10.2 9.3 8.5 7.9 7.3 6.8 6.2 5.4 4.9 4.7 S21 Mag. 4.80 4.46 3.75 3.23 2.93 2.66 2.47 2.33 2.20 2.05 1.87 1.76 1.71 Ang. 160 147 121 102 82 62 42 24 5 -14 -31 -46 -62 dB -32.8 -23.6 -23.6 -21.8 -19.7 -18.6 -17.7 -16.5 -15.8 -15.1 -15.0 -14.9 -14.8 S12 Mag. .023 .037 .066 .081 .103 .118 .130 .149 .162 .175 .178 .180 .183 S22 Ang. 76 67 50 41 28 17 6 -4 -16 -26 -35 -42 -52 Mag. .50 .48 .44 .41 .38 .35 .30 .26 .22 .21 .21 .22 .23 Ang. -23 -30 -45 -55 -65 -78 -93 -111 -134 -166 173 164 159 A model for this device is available in the DEVICE MODELS section. 70 mil Package Dimensions .040 1.02 SOURCE 4 .020 .508 GATE 1 DRAIN 3 SOURCE 2 .004 .002 .10 .05 .070 1.70 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 .495 .030 12.57 .76 .035 .89 5-59 |
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